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3 results about "Oxide" patented technology

An oxide /ˈɒksaɪd/ is a chemical compound that contains at least one oxygen atom and one other element in its chemical formula. "Oxide" itself is the dianion of oxygen, an O²⁻ atom. Metal oxides thus typically contain an anion of oxygen in the oxidation state of −2. Most of the Earth's crust consists of solid oxides, the result of elements being oxidized by the oxygen in air or in water. Hydrocarbon combustion affords the two principal carbon oxides: carbon monoxide and carbon dioxide. Even materials considered pure elements often develop an oxide coating. For example, aluminium foil develops a thin skin of Al₂O₃ (called a passivation layer) that protects the foil from further corrosion. Individual elements can often form multiple oxides, each containing different amounts of the element and oxygen. In some cases these are distinguished by specifying the number of atoms as in carbon monoxide and carbon dioxide, and in other cases by specifying the element's oxidation number, as in iron(II) oxide and iron(III) oxide. Certain elements can form many different oxides, such as those of nitrogen. other examples are silicon, iron, titanium, and aluminium oxides.

Piggy creep feed containing composite flavone and preparation method thereof

InactiveCN105614104AResist invasionImprove bowel functionAccessory food factorsAnimal scienceFlavones
The invention discloses piggy creep feed containing composite flavone. The piggy creep feed is prepared from the following raw materials in parts by weight: 13 to 20 parts of expanded corn, 10 to 25 parts of corn, 6 to 13 parts of broken rice, 8 to 12 parts of flour, 8 to 15 parts of whey mist, 3 to 8 parts of soy protein concentrate, 5 to 10 parts of extruded soybean, 0.7 to 3 parts of soya-bean oil, 7 to 12 parts of 46.5-percent bean pulp, 2 to 5 parts of fish meal, 2 to 5 parts of plasma protein powder, 0.3 to 0.7 part of mountain flour, 0.5 to 1.0 part of calcium hydrophosphate, 0.05 to 0.5 part of lysine, 0.05 to 0.3 part of threonine, 0.1 to 0.3 part of sodium chloride, 0.1 to 0.8 part of compound flavone premix compounds, 0.15 to 0.3 part of zinc oxide, 0.03 to 0.06 part of calcium propionate, 0.02 to 0.04 part of ethoxyquin and 1.0 part of suckling pig premix compounds. The invention also discloses a preparation method. The intestinal tract health and the production performance of weaned pigs can be improved.
Owner:ZHANGZHOU AONONG ANIMAL HUSBANDRY TECH

Matte glaze and preparation method thereof

InactiveCN110510876ALower melting temperatureWide firing rangeFritPotassium
The invention discloses a matte glaze and a preparation method thereof. The matte glaze comprises the following components by weight: 1-5 parts of zinc oxide, 5-15 parts of barium carbonate, 0-15 parts of zirconium silicate, 10-25 parts of potassium feldspar, 10-20 parts of kaolin, 5-15 parts of calcite, 5-15 parts of calcined talcum powder, 20-35 parts of a matte frit and 0.5-1 part of an additive. Specifically, the matte frit comprises the following components by weight: 30-50 parts of SiO2, 15-20 parts of Al2O3, 0.01-0.5 part of Fe2O3, 3-10 parts of CaO, 0.5-5 parts of MgO, 1-5 parts of K2O, 3-10 parts of Na2O, 3-10 parts of ZnO, 0.1-1 part of B2O3 and 10-25 parts of BaO. By introducing the matte frit, the melting temperature of the formula is lowered, the firing range of the formula isbroadened, and the glaze texture achieves a fine matte effect.
Owner:DONGGUAN CITY WONDERFUL CERAMICS IND PARK +1

Forming method of flash memory unit

ActiveCN104299904AIncrease nucleation rateHigh densitySemiconductor/solid-state device manufacturingSemiconductor devicesNanocrystalline siliconNanocrystal
The invention discloses a forming method of a flash memory unit. The forming method comprises the following steps: providing a semiconductor substrate; forming a tunneling oxide layer on the semiconductor substrate; forming nanocrystalline silicon particles on the tunneling oxide layer; forming an isolation insulating layer on the tunneling oxide layer and the nanocrystalline silicon particles; and forming a control grid on the isolation insulating layer, wherein the step of forming the nanocrystalline silicon particles on the tunneling oxide layer comprises: forming an amorphous silicon layer on the tunneling oxide layer; and performing repeated seed crystal particle forming processes on the amorphous silicon layer, wherein surface annealing treatment is performed between two adjacent seed crystal particle forming processes, and an annealing process is performed after the last seed crystal particle forming process. The flash memory unit can be used for storing a large quantity of electrons, and has high performance.
Owner:SEMICON MFG INT (SHANGHAI) CORP
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