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1 results about "Nanocrystalline silicon" patented technology

Nanocrystalline silicon (nc-Si), sometimes also known as microcrystalline silicon (μc-Si), is a form of porous silicon. It is an allotropic form of silicon with paracrystalline structure—is similar to amorphous silicon (a-Si), in that it has an amorphous phase. Where they differ, however, is that nc-Si has small grains of crystalline silicon within the amorphous phase. This is in contrast to polycrystalline silicon (poly-Si) which consists solely of crystalline silicon grains, separated by grain boundaries. The difference comes solely from the grain size of the crystalline grains. Most materials with grains in the micrometre range are actually fine-grained polysilicon, so nanocrystalline silicon is a better term. The term Nanocrystalline silicon refers to a range of materials around the transition region from amorphous to microcrystalline phase in the silicon thin film. The crystalline volume fraction (as measured from Raman spectroscopy) is another criterion to describe the materials in this transition zone.

Forming method of flash memory unit

ActiveCN104299904AIncrease nucleation rateHigh densitySemiconductor/solid-state device manufacturingSemiconductor devicesNanocrystalline siliconNanocrystal
The invention discloses a forming method of a flash memory unit. The forming method comprises the following steps: providing a semiconductor substrate; forming a tunneling oxide layer on the semiconductor substrate; forming nanocrystalline silicon particles on the tunneling oxide layer; forming an isolation insulating layer on the tunneling oxide layer and the nanocrystalline silicon particles; and forming a control grid on the isolation insulating layer, wherein the step of forming the nanocrystalline silicon particles on the tunneling oxide layer comprises: forming an amorphous silicon layer on the tunneling oxide layer; and performing repeated seed crystal particle forming processes on the amorphous silicon layer, wherein surface annealing treatment is performed between two adjacent seed crystal particle forming processes, and an annealing process is performed after the last seed crystal particle forming process. The flash memory unit can be used for storing a large quantity of electrons, and has high performance.
Owner:SEMICON MFG INT (SHANGHAI) CORP
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