1 results about "High stress" patented technology

The invention discloses a grid side wall imaging method. The method comprises the steps that a semiconductor structure which has a grid and a first side wall which covers the side wall of the grid is provided; a polycrystalline carbon layer is prepared to cover the surface of the semiconductor structure; the polycrystalline carbon layer is partially removed, so that a second side wall of the grid is formed on the surface of the first side wall; after a source drain implantation process is carried out on the semiconductor structure, the second side wall is removed; and a source drain annealing technology is continued. According to the grid side wall imaging method provided by the invention, through oxygenated plasma treatment, a polycrystalline carbon side wall which is used as a main side wall can be neatly removed; without using an SPT process which needs to be carried out in a specific etching cavity, the problem of void in a high stress through hole etching stop layer process can be solved; a process flow is simplified; and the production cost is reduced.