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1 results about "Silicon carbide" patented technology

Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite. Synthetic SiC powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite.

Method of preparing aluminum oxide-silicon carbide compound porous ceramic by aluminum-silicon industrial waste residues

ActiveCN107399988AModerate porosityHigh strengthCeramic materials productionCeramicwareFiltrationAdhesive
The invention discloses a method of preparing aluminum oxide-silicon carbide compound porous ceramic by aluminum-silicon industrial waste residues. The primary raw materials comprise industrial waste residues, carbon powder, a pore forming substance and an adhesive. The aluminum oxide-silicon carbide compound porous ceramic is prepared by the following steps of mixing, drying, forming and sintering to obtain a final product. Treatment and high additional value utilization of the industrial waste residues are achieved. The prepared porous ceramic is remarkable in performance, and can be applied to the fields of filtration, sound isolation, heat isolation, fire fighting and the like. The method is simple in process flow and convenient for industrialized promotion; and the cost is good to control and the method has extreme economical value.
Owner:NORTHEASTERN UNIV CHINA
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