Tailored
doping of barrier
layers enables balancing of the radiative recombination among the multiple-
quantum-wells in III-
Nitride light-emitting diodes. This tailored
doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce
electron leakage and thus reduce the efficiency droop in high-power III-
Nitride LEDs. Mitigation of the efficiency droop in III-
Nitride LEDs may enable the pervasive market penetration of
solid-state-lighting technologies in high-power lighting and illumination.