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High efficiency III-nitride light-emitting diodes

ActiveUS8451877B1Reduce leakageLow efficiencyOptical wave guidanceLaser detailsMarket penetrationEffect light

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Owner:NAT TECH & ENG SOLUTIONS OF SANDIA LLC

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